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Atom-Memory Unit Reduced to a Nanometer

The atom-memory units are now more efficient because they are smaller. It makes them operate with less energy. This increases their capacity which helps them run smarter and faster. The engineers at the University of Texas realize this. They struggled to reduce the memory chip to the smallest size possible. While learning the physics dynamic which unlocks dense memory storage capacities.

Just recently, they published their research in the Nature Nanotechnology. In this publication, we see their journey which began two years ago. The researchers had built the thinnest memory storage, but it was not enough. They wanted to reduce the size further, so they shrunk it some more. They cut the cross-section area to a single nanometer, which birthed the new atom-memory unit.

The Composition of the Atom-Memory Unit

Atom-Memory Unit Reduced to a Nanometer

To create these devices, they had to know the physics. They had to learn how to pack a large capacity into such tiny devices. It was the key to making them small, as they are now.

Deji Akinwande is a professor in the Department of Electrical and Computer Engineering. He reported what happens when a single additional metal atom goes into that nanoscale hole and fills it. It gives some of its conductivity to the material, which leads to a change.

The Application

Their research can be used with many atomically thin materials. The atom-memory unit processors let companies create more small devices. Smarter devices will require less energy to operate because of the tiny memory chip. Two years ago, they had called the memory device the “atomristor.

The atomristor was the smallest memory device at the time, and it was only one atomic layer thick. The researchers explained that to shrink the memory device, they needed to do more than just making it thinner. They had to build it with a smaller cross-sectional area.

The world’s smallest storage unit has been categorized as a memristor. It’s centered around electrical components with the ability to modify resistance between its two terminals. The memristor doesn’t require a third terminal in the middle.

It packs a capacity of near 25 terabits per square centimetre, with 100× higher memory density for every layer. This is when compared to flash memory devices, which is already available in commercial stores.

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